Defects by Design in 2D and 3D Materials: Theoretical and Experimental Investigations

Vsevolod Ivanov, Frances Allen, John Thomas, Liang Z. Tan

This symposium will provide a forum for researchers from both theory and experiment to discuss the tuning of material properties (optoelectronic, magnetic, chemical, porosity, etc.) through the introduction of defects at the atomic level to provide new functionalities for applications ranging from quantum sensing and computation to biosensing and nanofiltration. The defect types of interest include single vacancy, interstitial, and substitutional defects, as well as composite defects such as clusters and complexes. Topics to be covered will span recent developments in methods to deterministically place atomic-scale defects (ion and electron irradiation, annealing, plasma and chemical treatments, tip-induced manipulation, etc), characterization methods (transmission electron microscopy, scanning probe microscopy, Raman spectroscopy, photoluminescence, cathodoluminescence), new insights from modeling and theory (high-throughput calculations, machine learning, structure-property relations), device integration (optical cavities, electronics, sensors), and the latest results demonstrating defect-engineered properties in bulk, thin-film, and 2D materials.

Symposium Sponsor:

Symposium Location: B50 Auditorium

Symposium Schedule:

2:15 – 2:45 pm

Boubacar Kanté, University of California, Berkeley

2:45 – 3:00 pm

Kaushalya Jhuria, Berkeley Lab

3:00 – 3:15 pm

Yertay Zhiyenbayev, University of California, Berkeley

3:15 – 3:45 pm

Victoria Norman, University of California, Davis

3:45 – 4:15 pm
4:15 – 4:45 pm

Alex Smolyanitsky, National Institute of Standards and Technology

4:45 – 5:00 pm

Dana Byrne, University of California, Berkeley

5:00 – 5:15 pm

Yaprak Ozbakir, University of California, Berkeley

5:15 – 5:30 pm

Ashok Ajoy, University of California, Berkeley

5:30 – 5:45 pm

Wei Liu, Berkeley Lab